[Home]   [Full version]  

Researchers find a crucial difficulty in semiconductor device scaling

Sep 06 ,Technology



Full size image
In 1959, Nobel Prize winner Richard Feynman presented a talk entitled "There's Plenty of Room at the Bottom." Feynman concluded that there was no physical reason why humans couldn't manipulate atoms. However, if atomic manipulation is achieved the question of observing the new atom positions remains. How do you know what you have done?

As reported in the Sept. 7, 2007 issue of Science, IBM and Imago have taken a seminal step along the path to achieving Dr. Feynman’s vision by observing, for the first time, distributions of individual dopant atoms in semiconductor devices.

Atom probe tomography was used to quantify the location and elemental identity of the atoms proximate to defects in silicon. The dopants were implanted into the silicon uniformly and it was always hoped that the distribution of dopant atoms would be uniform.

However, the IBM and Imago researchers found that clusters (more properly Cottrell atmospheres) of dopant atoms form around defects after ion implantation and annealing. Furthermore, these atmospheres persist in surrounding dislocation loops even after considerable thermal treatment creating dopant fluctuations that may ultimately limit the scalability of semiconductor devices.

“This is the first time that unambiguous quantitative 3D information regarding the precise location of individual dopant atoms relative to defects has been available” said study co-author and Imago CEO Tom Kelly. “The ability of the Imago LEAP 3000X Si laser assisted atom probe to make this measurement is the fruition of many years of instrumentation and applications development. We now have a powerful new way to probe the atomic positions of dopants in a semiconductor device. This is a critical tool for scientists seeking to answer Professor Feynman’s challenge to manipulate matter at the atomic level and hence enable nanotechnology.”

Previously, researchers have used secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) to correlate indirectly the presence of dopant atoms with the evolution of defects, and detailed models have been proposed to account for these experimental correlations. However, the atom probe study published in Science reports, for the first time, the location of individual dopant atoms. Said Imago Senior Director of Applications and co-author David Larson, “The Sept. 7 Science article is the most recent in a series of significant scientific advances reported by Imago’s customers.” Added Dr. Larson, “In addition to producing breakthrough published scientific results, the Imago atom probe is also being applied to various industrial problems. These proprietary results are advancing scientific knowledge, enabling the development of new products, and improving time to market for our customers.”

Source: Imago Scientific Instruments

Related stories:

Engineers chart semiconductors on the scale of atoms
Spanning fewer than a thousand atoms, the electronic devices on semiconductor chips have become so miniscule they defy most efforts to characterize them. Now for the first time, engineers have demonstrated a way to image these vanishingly small devices by mapping them atom by atom.
A 'squeeze' in cuprates may explain superconducting temperatures
New experiments at Cornell have verified a theory that variations in the distance between atoms in cuprate superconductors account for differences in the temperature at which the material begins to superconduct. A better understanding of the process could lead to superconductors that work at higher temperatures.
Debut of TEAM 0.5, the World's Best Microscope
TEAM 0.5, the world's most powerful transmission electron microscope — capable of producing images with half‑angstrom resolution (half a ten-billionth of a meter), less than the diameter of a single hydrogen atom — has been installed at the Department of Energy's National Center for Electron Microscopy (NCEM) at Lawrence Berkeley National Laboratory.
Researchers discover hydrogen can form multicenter bonds
Researchers at the University of California, Santa Barbara have shown that, under the right circumstances, hydrogen can form multicenter bonds, where one hydrogen atom simultaneously bonds to as many as four or six other atoms. Tested for hydrogen in metal oxides, the discovery could have a broad range of technological impact.
Researchers shine light on atomic transistor
Researchers from TU Delft and the FOM Foundation (Netherlands) have successfully measured transport through a single atom in a transistor. This research offers new insights into the behaviour of so-called dopant atoms in silicon.
Locationg crucial atoms in superconductors
With an advanced imaging technique and a savvy strategy, researchers at Cornell University's Laboratory of Atomic and Solid State Physics (LAASP) have shown how adding charge-carrying atoms like oxygen to a superconductor can increase the material's ability to conduct electricity overall and -- paradoxically -- to decrease it in localized spots.
The discovery, published in the Aug. 12 issue of Science, could lead to the eventual development of more effective superconductors.
A New Model of Quantum Dots: Rethinking the Electronics
Quantum dots, tiny crystals consisting of a few hundred to a few thousand atoms, sparkle with promise for uses ranging from tagging proteins in living cells to foiling counterfeiters to enabling quantum computers. The optics and electronics of these semiconductor nanocrystals are dramatically different from the same materials in bulk. But it turns out that one of the most important electronic properties of quantum dots has been misunderstood for over a decade.
Novel Ion Optics Design Ensures High Sensitivity And Mass Resolution For 3D Atom Probe
The combination of the high mass-resolution reflectron lens and a patented, three pair delay line detector brings exceptional sensitivity to the 3-Dimensional Atom Probe (3DAP) from Oxford nanoScience Ltd. This unique combination brings the best atom probe mass resolution available commercially both at the conventionally quoted Full Width at Tenth Maximum (FWTM) and the much more challenging Full Width Thousandth Maximum (FW0.1%M). This makes the instrument particularly well suited to the detection of small quantities of dopant materials. In addition, unlike other commercially available detectors, up to 98.5% of the detected atoms are both spatially located and chemically identified.

News discussion:

Technology news

[Home]   [Full version]