Samsung Electronics today announced that it has developed the industry's first 40-nanometer memory device. The new 32 Gigabit (Gb) NAND flash device is the first memory to incorporate a Charge Trap Flash (CTF) architecture, a revolutionary new approach to further increase manufacturing efficiency while greatly improving performance.
The new CTF-based NAND flash memory increases the reliability of the memory by sharply reducing inter-cell noise levels. Its surprisingly simple structure also enables higher scalability which will eventually improve manufacturing process technology from 40 nm to 30 and even 20nm.
In each 32Gb device, the control gate in the CTF is only 20 percent as large as a conventional control gate in a typical floating gate structure. With CTF, there is no floating gate. Instead, the data is temporarily placed in a "holding chamber" of the non-conductive layer of the flash memory composed of silicon nitride (SiN). This results in a higher level of reliability and better control of the storage current.
The 32Gb NAND flash memory can be used in memory cards with densities of up to 64-Gigabytes (GBs). One 64GB card can store over 64 hours of DVD resolution movies (40 movies) or 16,000 MP3 music files (1,340 hours).
The CTF design is enabled through the use of a TANOS structure comprised of tantalum (metal), aluminum oxide (high k material), nitride, oxide and silicon. The use of a TANOS structure marks the first application of a metal layer coupled with a high k material to the NAND device.
The TANOS CTF architecture, which serves as the foundation of the 40nm 32Gb CTF NAND flash announced today, was developed after extensive research of the Samsung Semiconductor R&D department. Samsung first revealed the TANOS structure through a paper at the 2003 International Electron Devices Meeting (IEDM).
The new 32Gb CTF memory was announced at the sixth annual Samsung press conference in Seoul.
Introduction of a 40nm manufacturing process for 32Gb NAND flash marks the seventh generation of NAND flash that follows the New Memory Growth Theory of double-density growth every 12 months, which was first presented by Dr. Chang Gyu Hwang, president and CEO of Samsung Electronics’ Semiconductor Business in a keynote address at ISSCC 2002.
Source: Samsung
Related stories:
Micron Tech cuts global work force by 15 percent
(AP) -- Micron Technology Inc. will close a factory and cut about 15 percent of its work force around the world as part of a restructuring of its computer memory chip operations.
Industry group: August chip sales rose 5.5 percent
(AP) -- Semiconductor sales totaled $22.7 billion in August, up 5.5 percent from a year ago and 2.4 percent from the previous month, the Semiconductor Industry Association said Thursday.
Toshiba Launches 256GB Solid State Drives with MLC
Toshiba today announced enhancements to its line-up of NAND-flash-based solid state drives (SSD) with the addition of an industry-leading 256-gigabyte (GB) SSD and the launch of a series of small-sized Flash Modules for netbook computers ultra-mobile PCs (UMPCs) and other mobile and peripheral applications. The new drives will be showcased at the CEATEC in Makuhari, Japan, from September 30 to October 4.
Intel Introduces Solid-State Drives for Notebook and Desktop Computers
Intel Corporation announced today it has begun shipping Intel X18-M and X25-M Mainstream SATA Solid-State Drives (SSDs) based on multi-level cell (MLC) NAND flash technology for laptop and desktop computers. The new high-performing data storage devices give computer buyers a new level of system responsiveness in a lightweight, rugged, low-power package that can replace traditional hard disk drives.
Memory chip makers still hurting from supply glut
While chip companies are getting a much-needed boost from stable demand for consumer tech products, the glut in memory products continues to hurt many of them, analysts say.
Samsung Introduces Software to Increase Efficiency of Embedded Memory Solutions for Smart Phones
Samsung Electronics, the world leader in advanced semiconductor technology, announced today that it is introducing software designed to optimize the high performance features of its proprietary embedded flash memories: OneNAND, Flex-OneNAND and moviNAND, in smart phones, using the major mobile operating systems – Windows Mobile(CE), Symbian, Linux, and RTOS (real-time operating system).
Toshiba Launches the Largest Density Embedded NAND Flash Memory Devices
Toshiba Corporation today announced the launch of 32GB embedded NAND flash memory modules that offer the largest density yet announced plus full compliance with the e-MMC and eSD standards. The embedded devices are designed for application in mobile digital consumer products, including mobile phones and video cameras. Samples will be available in September 2008, and mass production will start in the fourth quarter.
SanDisk Releases Solid-State Drives Aimed at Ultra Low-Cost PCs
SanDisk Corporation today introduced a line of flash memory-based solid-state drives (SSDs) that are designed for an emerging new category of portable consumer electronics – called Ultra Low-Cost PCs (ULCPC) or 'netbooks' – that allow users to have an enhanced experience while easily surfing the Internet using wireless communication. The SanDisk pSSD (Parallel ATA solid state drive) eliminates the need for a hard disk drive and can store both the operating system and application data for these new devices.
