A research team led by Carnegie Mellon University Materials Science and Biomedical Engineering Professor Prashant Kumta has discovered a nanocrystalline material that is cheaper, more stable and produces a higher quality energy storage capacity for use in a variety of industrial and portable consumer electronic products.
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Nano World: Methanol fuel cell thru nano
Nanotechnological fuel cells that run on methanol could one day power everything from cell phones to cars, experts told UPI's Nano World.
Fujitsu Develops World's First GaN HEMT Able to Cut Power in Standby Mode and Achieve High Output
Fujitsu today announced the development of a new type of gallium nitride (GaN)-based high electron mobility transistor (HEMT) that features a new structure ideal for use in amplifiers for microwave and millimeter-wave transmissions, frequency ranges for which usage is expected to grow.
Advance brings low-cost, bright LED lighting closer to reality
Researchers at Purdue University have overcome a major obstacle in reducing the cost of "solid state lighting," a technology that could cut electricity consumption by 10 percent if widely adopted.
Powering up microwave amplifiers for a wireless world
Four years ago, Europe trailed the rest of the world in microwave amplifier research and development. Now, however, European-designed transistors and amplifiers equal or outperform the competition worldwide. Today’s information-rich, wireless world depends on microwave amplifiers that operate efficiently and linearly at high power and high frequencies, so it is crucial that Europe is at the forefront of such research.
Avalanche photodiodes target bioterrorism agents
Researchers have shown that a new class of ultraviolet photodiode could help meet the U.S. military's pressing requirement for compact, reliable and cost-effective sensors to detect anthrax and other bioterrorism agents in the air.
IMEC, AIXTRON set important step towards low-cost GaN power devices
IMEC, Europe's leading independent research center in the field of nanoelectronics, and AIXTRON, the world leader in metal-organic chemical-vapor deposition (MOCVD) equipment, have demonstrated the growth of high-quality and uniform AlGaN/GaN heterostructures on 200mm silicon wafers. This demonstration is a milestone towards fabricating low-cost GaN power devices for high-efficiency/high-power systems beyond the silicon limits.
Rensselaer student invents alternative to silicon chip
Even before Weixiao Huang received his doctorate from Rensselaer Polytechnic Institute, his new transistor captured the attention of some of the biggest American and Japanese automobile companies. The 2008 graduate’s invention could replace one of the most common pieces of technology in the world—the silicon transistor for high-power and high-temperature electronics.
Silicon Light Bulbs to Compete with Fluorescent Bulbs
Thomas Edison invented the light bulb in 1880, and, since the 1920s, the incandescent light bulb has remained largely unchanged. While that's a testament to Edison's ingenuity, it's also a bulb that uses up to 95% of its power to generate heat rather than light.