Normally-off operation has been strongly desired for GaN power transistors, however, the reported approaches resulted in high on-state resistance. In Panasonic's new GaN transistor called “Gate Injection Transistor (GIT)”, the normally-off positive threshold voltage of 1V is achieved by use of a pn-junction gate structure instead of conventional metal gate.
In addition, injection of holes from the p-type gate layer drastically increases the drain current resulting in low specific on-state resistance (RonA) of 2.6mΩcm2. Note that the high breakdown voltage of 640V is obtained on cost-effective silicon substrate.
Panasonic's proprietary GaN power transistor “GIT” is applicable to future high efficiency power switching systems replacing Si-based power devices.
Applications for eighty nine domestic and fifty two international patents have been filed. These research and development results have been presented at International Electron Devices Meeting 2006, held at San Francisco, California, U.S. from December 11 to 13, 2006.
Source: Panasonic
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