Samsung Electronics Co., Ltd., the world leader in advanced semiconductor memory technology, announced today the industry's first mass production of 90nanometer (nm) 512Mb
DDR SDRAM on 300mm base wafers. Samsung pioneered nanometer level production technology in 2003 with production of 2Gb NAND flash memory in a 90nm process.
The 90nm 512Mb DDR SDRAM with voltage rates of 2.5V is available at both 400 and 333MHz. The new device is already being verified by leading chipset companies. The migration from 0.10micron to 90nm boosts production by 40 percent and offers higher production efficiencies at the same time.
The key to successful production in 90nm process technology are; short wave length Argon Fluoride (ArF) light source that realizes the finer circuitry, high dielectric Alumina Hafnium Oxide (AHO) applied within the capacitor to enhance data storage characteristics, and Samsung's unique three dimensional transistor circuitry, Recessed Channel Array Transistor (RCAT), implemented to reinforce the capacitors’ data retaining features enhancing the refresh cycles.
Market research firm, Gartner Dataquest, forecasts the transition of DRAM market will transition from 256Mb to 512Mb as the memory industry mainstay density in the second half of 2004, with 512Mb densities to reach $13billion in 2005.
Related stories:
Samsung Begins World's First 60nm-DRAM Mass Production
Samsung Electronics announced today that it has begun mass producing the industry’s first 1Gigabit (Gb) DDR2 DRAM (dynamic random access memory) using 60 nanometer (nm)–class process technology.
Samsung First to Mass-produce 1Gb DDR2 Memory with 80nm Process Technology
Samsung Electronics, the world leader in advanced memory technology, announced today mass production of 1Gigabit (Gb) DDR2 DRAM memory using 80 nanometer (nm) process technology. While monolithic 1Gb DDR2 is available today, it is produced with more costly and less efficient 90 nm technology.
Samsung Now Mass Producing First 90nm 512Mb Mobile DRAM
Samsung Electronics announced that it has started to mass produce 512Mb DRAM (dynamic random access memory) for mobile products, using 90nm circuitry. This marks the first time that 512Mb mobile DRAM will be available anywhere and the first time that nano-scale process technology will be used in the production of any mobile DRAM.
Samsung Develops World's First 512-Megabit DDR2 with 70nm Process Technology
Samsung Electronics announced that it has completed development of the world-first 512-Megabit (Mb) DDR2 SDRAM using 70-nanometer process, the smallest process technology yet applied to a DRAM device.
Spansion Demonstrates High-Density Flash Memory Solutions Based On 90nm Mirrorbit Technology
Spansion LLC, the Flash memory venture of AMD and Fujitsu Limited, today showed silicon of its single-chip 1 Gbit GL NOR Flash memory and demonstrated working silicon of its 1Gb ORNAND Flash memory based on 90nm MirrorBit technology. Manufactured at Spansion’s flagship Fab 25 facility in Austin, Texas, Spansion 90nm MirrorBit technology is the foundation for a compelling high-density Flash memory roadmap, featuring products combining the density, performance, reliability and cost structure required for wireless and embedded applications.
Samsung Breaks Speed Record for Graphics Memory Chips
Samsung Electronics Co., Ltd., the leader in advanced semiconductor technology, today announced that it has developed the industry's fastest 2.0 gigabit per second (Gbps) 90 nanometer 512Mb graphics double data rate 3 (GDDR3) dynamic random access memory (DRAM).
Samsung's first 90nm 512Mb DRAM memory adopted for use in Playstation 3
Samsung Electronics today announced that it has produced the first 90-nanometer production samples of 512-Megabit XDR (eXtreme Data Rate) DRAM, the fastest memory for multimedia applications.
The Samsung 512Mb XDR DRAM can transmit data with up to 9.6 GigaBytes per second, 12 times faster than DDR400 memory and 6 times faster than leading RDRAM (PC 800) devices. It uses advanced 90-nanometer memory technology to achieve a peak operating speed of 4.8Gbps at 1.8 volts.
XDR DRAM from Samsung will be adopted for Sony Computer Entertainment’s next generation computer entertainment system, Playstation 3.
Samsung Introduces 90-Nanometer High Performance Smart Card IC
Samsung Electronics Co., Ltd., a leader in advanced semiconductor technology, announced today its 90-nanometer smart card IC with high data storage capacity for subscriber identity module (SIM) cards and mobile TV applications.
