An organizer for silicon

Organizers make life easier; aluminum could help the semi-conductor industry to convert silicon from a disordered to an ordered form at low temperatures. This crystalline silicon functions much more efficiently in solar cells, for example. However up to now it has only been possible to manufacture it at high temperatures and it could not therefore be applied to heat-sensitive materials such as plastic or paper.

Scientists at the Max Planck Institute of Metals Research in Stuttgart have now found a way to systematically lower the crystallization temperature of silicon - from 700º to 150ºCelsius and to any point within that range. They succeeded in doing this by applying a thin layer of aluminum to disordered silicon; the thickness of the layer determined the crystallization temperature. The researchers have also explained why this happens. These findings could help to manufacture solar cells and other electronic components on cheap and flexible materials such as glass, plastic or even paper. (Physical Review Letters, 27 March 2008)

Silicon is the material of choice in the semi-conductor industry. Sometimes it needs to be in a crystalline form and sometimes in an amorphous, that is, a disordered form. Because the range of applications for chips and solar cells is so wide, the materials which act as carriers of the semi-conductor and the conditions under which they have to work have become correspondingly varied. The industry would therefore like to be able to deliberately manipulate the temperature at which silicon crystallizes. Mostly, they want to lower the temperature, so that they can get the semi-conductor material to crystallize on heat-sensitive materials. Sometimes, however, they also want to prevent the silicon from changing from the amorphous to the crystalline form.

It has long been known that the crystallization temperature of a semi-conductor changes when it is in contact with a different metal. "We have exploited this effect for the first time in order to set the crystallization temperature of silicon using a covering layer of aluminum crystals," says Lars Jeurgens, one of the researchers in Eric J. Mittemeijer’s department at the Max Planck Institute of Metals Research in Stuttgart who was involved. It is possible to get it below 200º with layers thicker than 20 nanometers. With thinner layers, the temperature rises considerably.

The scientists in Stuttgart were only able to control the temperature so precisely because they had clarified in advance what the effect was based on and how it could be described theoretically. It was already known that the aluminum layer weakens the bonds between the silicon atoms. It is therefore easier for them to rearrange themselves in an ordered form which has the effect of lowering the energy of the silicon block. If there is no aluminum layer to loosen the bonds in the amorphous silicon, a temperature of 700º Celsius is required to break them up.

The extent to which the thickness of the aluminum layer lowers the crystallization temperature depends on the ratios of energy in the system formed by the silicon block and the aluminum layer. The maxim is: everything is done to save energy. The energies at the interface between the silicon and the aluminum play a major role. In order to lower the total energy of the system, the silicon atoms first position themselves in a disordered way at the aluminum grain boundaries. It is easier for them to fit with the crystal lattice of the aluminum if they are in a disordered state. If they were to order themselves there would be energy-consuming tensions at the boundary between the two different and rigid crystal lattices.

Although it initially does not sound like it, this encourages the silicon to crystallize - albeit indirectly. As soon as a thin, disordered silicon layer has formed on the aluminum grain boundary, there is another opportunity to save energy: the silicon atoms arrange themselves neatly into a crystal. The ratio of crystallization energy to interface energy is decisive here, because it determines the temperature at which the covering silicon layer starts to crystallize. The researchers in Stuttgart manipulate this fine balance deliberately by varying the thickness of the aluminum layer.

In these studies, the researchers initially concentrated on the moment at which crystallization starts. What happens afterwards has not yet been completely explained. During the process, crystalline silicon gradually displaces the aluminum layer. The aluminum atoms travel through the crystalline silicon and collect at the bottom of the silicon block. Why they do this and what exactly happens is now being examined by the materials scientists in Eric. J. Mittemeijer’s department.

References:

Zumin Wang, Jiang Y. Wang, Lars P. H. Jeurgens, and Eric J. Mittemeijer, Tailoring the ultrathin Al-induced crystallization temperature of amorphous Si by application of interface thermodynamics, Physical Review Letters 100 (2008), 125503 (DOI: 10.1103/PhysRevLett.100.125503)

Zumin Wang, Jiang Y. Wang, Lars P. H. Jeurgens, and Eric J. Mittemeijer, Thermodynamics and mechanism of metal-induced crystallization in immiscible alloy systems: Experiments and calculations on Al/a-Ge and Al/a-Si bilayers, Physical Review B 77 (2008), 045424 (DOI: 10.1103/PhysRevB.77.045424)

Source: Max Planck Institute for Metals Research

Related stories:

Sematech Reveals Details on Practical High-K Metal Gate Systems for 45nm And Beyond
Building on their successful CMOS solution for gate‑first, thermally stable, high-k dual metal gates, SEMATECH researchers have released further data that portends a new era in which future transistor scaling is dominated by heterogeneous integration of new materials onto silicon.
Combating Friction and Stiction
Micro-electro-mechanical systems, popularly referred to as MEMS, in small electronic devices often fail because of adhesion and stiction – the attractive force between the surfaces of interacting parts. University of Arkansas researchers have developed a surface-topography engineering method that reduces these forces and will help microscopic parts interact and function smoothly.
UCLA Chemist Provides New Insights into one of Science's Icons and its History
The periodic table of chemical elements hangs in front of chemistry classrooms and in science laboratories worldwide. Yet much was unknown about its history and evolution until now.
Nanocrystals Are Hot
Scientists at the Department of Energy's Lawrence Berkeley National Laboratory have discovered that nanocrystals of germanium embedded in silica glass don't melt until the temperature rises almost 200 degrees Kelvin above the melting temperature of germanium in bulk. What's even more surprising, these melted nanocrystals have to be cooled more than 200 K below the bulk melting point before they resolidify. Such a large and nearly symmetrical "hysteresis" — the divergence of melting and freezing temperatures above and below the bulk melting point — has never before been observed for embedded nanoparticles.
New device tests uncertainty principle with new precision
In the submicroscopic world -- the domain of elementary particles and individual atoms -- things behave in the strange, counter-intuitive fashion governed by the principles of quantum mechanics. Nothing (or so it seems) like our macroscopic world -- or even the microscopic world of cells or bacteria or dust particles -- where Newton's much more reasonable laws keep things sensibly ordered.
Dawn Log - Keeping Busy
Dawn continues to keep its human handlers very busy as preparations continue on schedule to meet the planned opening of the launch period on June 20, 2007. Much of June 2006 was devoted to conducting the comprehensive performance tests described in the previous log.
Nanoparticles self-assemble through chemical lithography
Nanoparticles – while possessing some amazing properties of strength and power – are also delicate little things, when it comes to manipulating them for use in nanodevices. Many scientists consider that the most promising method of incorporating nanoparticles into functional structures is through their own self-assembly, an approach commonly attempted through different lithography techniques.
Double duty: Magnetic nanotechnology holds promise in fighting cancer, advancing computing
Detecting cancer and reinventing computing are two challenges that seemingly have little, if anything, to do with each other. That is, unless you are a nanotechnologist like Shan Wang, an associate professor of materials science and engineering and of electrical engineering at Stanford. To him, the problems are two sides of the same coin, or more aptly, opposite poles of the same magnet.

News discussion:

Physics news