Samsung Electronics Unveils Next-generation Technology Breakthroughs

Samsung revealed its development of a three-dimensional transistor process technology for 50 nm and beyond geometry bringing the die size to a quarter of what conventional memory chips cover today. The new paper moves up the introduction of three-dimensional transistor technology from the initial point of introduction estimated to be 2007.

Other next generation memory technologies were introduced; following last year’s introduction Samsung presented a high capacity 64Mb PRAM and further expanding its expertise in nano-scale memory technology, a 70nm process technology for both NOR Flash technology and low-power DRAM were introduced.

Samsung’s System LSI paper contributions continue to grow. Out of the total 22 Samsung papers selected, 8 were generated from the System LSI end. Samsung presented a new material Ruthenium as an adhesive to enhance the copper interconnection technology to secure a stable chemical vapor deposition (CVD) seed layer for copper interconnect.

The company advances further in LONOM(Localized Oxide-Nitride-Oxide Memory) technology for logic embedded flash memory with a paper introducing a new approach balancing the height difference between logic side and memory side of an embedded device, simplifying the sophisticated process steps, and moreover boosting speed, cutting power consumption and production costs bringing a more economical solution for higher business potential.

A notable approach on the System LSI front is the new concept Samsung introduced on mechanical stress engineering. Shedding light on the possibility of the effect of flickering noise, Samsung’s new paper set the stage for dispute to a new direction of development in the field of mechanical stress engineering.

The Symposia on VLSI Technology and Circuits represents one of the world’s most prestigious academic conferences specializing in semiconductors, along with the International Electron Device Meeting (IEDM) and the International Sold-State Circuits Conference (ISSCC). The event was first organized under joint US-Japanese sponsorship in 1981 and is held alternately in Honolulu and Kyoto each June.

The world’s top semiconductor makers submit hundreds of academic papers to this conference each year. The documents are strictly screened before final selection for presentation. The Highlight Session features the top papers for the year, underscoring the individual company’s technology and production expertise.

The original press release can be found here.

Samsung Introduces High-performance, Low-density, SATA II SSDs
Samsung Electronics announced today that it has begun sampling low-density, higher-performance solid state drives (SSDs) that are only 30 percent of the size of 2.5-inch SSDs and highly cost-efficient to manufacture. With the introduction of these smaller, low-capacity SSDs, Samsung now offers an attractive replacement for existing hard drives used in low-cost PCs. Available in densities of 8GB, 16GB and 32GB, the new multi-level-cell SSDs will be mass produced beginning next month.
Samsung Introduces Software to Increase Efficiency of Embedded Memory Solutions for Smart Phones
Samsung Electronics, the world leader in advanced semiconductor technology, announced today that it is introducing software designed to optimize the high performance features of its proprietary embedded flash memories: OneNAND, Flex-OneNAND and moviNAND, in smart phones, using the major mobile operating systems – Windows Mobile(CE), Symbian, Linux, and RTOS (real-time operating system).
Apple iPhone 3G makes international debut Friday
The iPhone 3G makes its international debut Friday in an eagerly-awaited launch expected to boost Apple's fortunes along with its share of the booming "smart phone" market.
Samsung Launches New Compact Camcorder with YouTube Connectivity
Samsung Electronics unveiled today the SC-MX20, the successor to the company’s popular SC-MX10 compact digital camcorder. The ideal camcorder for the exploding generation of consumers uploading video content to the Internet, the SC-MX20 features a customized recording mode optimized for YouTube or multi-media devices, further simplifying the way users integrate the camcorder into their digital lifestyles.
Samsung Introduces 90-Nanometer High Performance Smart Card IC
Samsung Electronics Co., Ltd., a leader in advanced semiconductor technology, announced today its 90-nanometer smart card IC with high data storage capacity for subscriber identity module (SIM) cards and mobile TV applications.
Samsung Electronics unveils new 256GB solid state drive
Samsung Electronics announced today that it has developed the world’s fastest, 2.5-inch, 256 Gigabyte (GB) multi-level cell (MLC) based solid state drive (SSD) using a SATA II interface at the fifth annual Samsung Mobile Solution Forum held at the Westin Taipei Hotel. Samsung’s new 256GB SSD is also the thinnest drive with the largest capacity to be offered with a SATA II interface.
Intel, Samsung, TSMC Reach Agreement for 450mm Wafer Manufacturing Transition
Intel Corp., Samsung Electronics and TSMC today announced they have reached agreement on the need for industry-wide collaboration to target a transition to larger, 450mm-sized wafers starting in 2012. The transition to larger wafers will enable continued growth of the semiconductor industry and helps maintain a reasonable cost structure for future integrated circuit manufacturing and applications.
Samsung Announces Two New Blu-Ray Players
Samsung is leading the effort to make Blu-ray a mainstream market. The company has the technology to offer the most diverse and powerful lineup, which now includes a new 4G Blu-ray player and 2G Blu-ray home theater.

Samsung Electronics Unveils Next-generation Technology Breakthroughs

Related stories:

News discussion: