Infineon Introduces Next-Generation GOLDMOS® Technology and High-Power RF Transistors for High Linear Efficiency

The new GOLDMOS technology reflects the company’s commitment to advanced LDMOS wafer fabrication processes for high-power RF transistors that set new performance standards for tomorrow’s wireless networks. Infineon continues to support gold metallization because of its proven superior reliability at high temperatures. In combination with the company’s extensive packaging engineering and advanced semiconductor modeling experience, the new process technology has resulted in high-power RF transistors that set new performance standards.

“Our engineering teams developed and introduced this next-generation silicon and packaging, with the best performance in the industry, in less than a year,” said Johan Tingsborg, Vice President and General Manager, Wireless Infrastructure, Secure Mobile Solutions Business Group, at Infineon Technologies. “This shows the dedication Infineon has to the wireless infrastructure market. We will continue with an even higher level of determination because we are committed to this market and to helping our customers meet the challenges of RF power management for future wireless networks.”

Technical information on GOLDMOS High-Power RF Transistors

Infineon’s new GOLDMOS High-Power RF Transistors provide leading-edge linear efficiency (a typical 10 percent improvement compared to the previous generation), ultra-wide-bandwidth performance, reduced memory effect, and the industry’s best thermal performance. For example, one of the first products incorporating the new technology is the single-ended, 100-watt PTFA211001E 2.1 GHz device. In 2-carrier WCDMA 3GPP mode, this device has an average output of 22 watts and 16.5 dB gain with 30 percent efficiency. It has an ultra-wide-bandwidth of several hundred MHz, third-order intermodulation distortion (IM3) performance of -37 dBc and a thermal resistance of only 0.38°C/W.

With a 30 percent increase in power density and higher terminal impedance compared to its previous-generation GOLDMOS, Infineon is bringing a new family of power transistors to market that is targeted at today’s most advanced amplifier applications, which require high peak-to-average power levels over wide bandwidths. The thermal performance of the GOLDMOS transistors is significantly improved over previous-generation transistors, achieving the lowest junction temperatures compared to other RF power transistors available in the market, emphasizing Infineon’s dedication to delivering the industry’s most reliable devices.

Availability

Initial GOLDMOS product samples will be available in the 3rd quarter of 2004, with full production beginning in the 4th quarter of 2004. Additional information on Infineon’s RF power products is available at: http://www.infineon.com/wireless

Bottoms up: Better organic semiconductors for printable electronics
Researchers from the National Institute of Standards and Technology and Seoul National University have learned how to tweak a new class of polymer-based semiconductors to better control the location and alignment of the components of the blend. Their recent results—how to move the top to the bottom—could enable the design of practical, large-scale manufacturing techniques for a wide range of printable, flexible electronic displays and other devices.
Scientists Move Optical Computing Closer to Reality
(PhysOrg.com) -- Scientists at the University of Pennsylvania have theorized a way to increase the speed of pulses of light that bound across chains of tiny metal particles to well past the speed of light by altering the particle shape. Application of this theory would use nanosized metal chains as building blocks for novel optoelectronic and optical devices, which would operate at higher frequencies than conventional electronic circuits. Such devices could eventually find applications in the developing area of high-speed optical computing, in which protons and light replace electrons and transistors for greater performance.
Large area transistors get helping hand from quantum effects
Researchers from the Hitachi Central Research Laboratory, Japan, and the Advanced Technology Institute of the University of Surrey today report that nano-designed transistors for the large area display and sensor application field benefit hugely from quantum size effects.
A first in integrated nanowire sensor circuitry
Scientists at the U.S. Department of Energy's Lawrence Berkeley National Laboratory and the University of California at Berkeley have created the world's first all-integrated sensor circuit based on nanowire arrays, combining light sensors and electronics made of different crystalline materials. Their method can be used to reproduce numerous such devices with high uniformity.
Scientists carve functional nanoribbons using super-heated, nano-sized particles of iron
Due to its remarkable electronic properties, few layer graphene, or FLG, has emerged as a promising new material for use in post-silicon devices that incorporate the quantum effects that emerge at the nanoscale. Now, physicists at the University of Pennsylvania have demonstrated a new method by which FLG can be etched along flawless, crystallographic axes by using thermally activated nanoparticles, a technique that results in atomically precise, macroscopic length ribbons of graphene. The advance could enable atomically precise, and far simpler, construction of integrated circuits from single graphene sheets with a wide range of technological applications.
Researchers redefine ultrathin display process
(PhysOrg.com) -- The Flexible Display Center at Arizona State University has developed a new process for manufacturing high-performance flexible displays on transparent plastic.
'Nanonet' circuits closer to making flexible electronics reality
Researchers have overcome a major obstacle in producing transistors from networks of carbon nanotubes, a technology that could make it possible to print circuits on plastic sheets for applications including flexible displays and an electronic skin to cover an entire aircraft to monitor crack formation.
Portuguese team makes first paper based transistor
(PhysOrg.com) -- Elvira Fortunato and colleagues from the Centro de Investigação de Materiais (Cenimat/I3N), at Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, made the first Field Effect Transistor (FET) with a paper "interstrate" layer.

Infineon Introduces Next-Generation GOLDMOS® Technology and High-Power RF Transistors for High Linear Efficiency

Related stories:

News discussion: