[Home]   [Full version]  

Intel, Samsung, TSMC Reach Agreement for 450mm Wafer Manufacturing Transition

May 06 ,Technology


Intel Corp., Samsung Electronics and TSMC today announced they have reached agreement on the need for industry-wide collaboration to target a transition to larger, 450mm-sized wafers starting in 2012. The transition to larger wafers will enable continued growth of the semiconductor industry and helps maintain a reasonable cost structure for future integrated circuit manufacturing and applications.

The companies will cooperate with the semiconductor industry to help ensure that all of the required components, infrastructure and capability are developed and tested for a pilot line by this target date.

Historically, manufacturing with larger wafers helps increase the ability to produce semiconductors at a lower cost. The total silicon surface area of a 450mm wafer and the number of printed die (individual computer chips, for example) is more than twice that of a 300mm wafer. The bigger wafers help lower the production cost per chip. Additionally, through more efficient use of energy, water and other resources, bigger wafers can help diminish overall use of resources per chip. For example, the conversion from 200mm wafers to 300mm wafers helped reduce aggregate emissions per chip of air pollution, global warming gasses and water, and further reduction is expected with a transition to 450mm wafers.

"There is a long history of innovation and problem solving in our industry that has delivered wafer transitions resulting in lower costs per area of silicon processed and overall industry growth." said Bob Bruck, vice president and general manager, Technology Manufacturing Engineering in Intel's Technology and Manufacturing Group. "We, along with Samsung and TSMC, agree that the transition to 450mm wafers will follow the same pattern of delivering increased value to our customers."

Intel, Samsung and TSMC indicate that the semiconductor industry can improve its return on investment and substantially reduce 450mm research and development costs by applying aligned standards, rationalizing changes from 300mm infrastructure and automation, and working toward a common timeline. The companies also agree that a cooperative approach will help minimize risk and transition costs.

"The transition to 450mm wafers will benefit the entire ecosystem of the IC industry, and Intel, Samsung, TSMC will work together with suppliers and other semiconductor manufacturers to actively develop 450mm capability," said Cheong-Woo Byun, senior vice president, Memory Manufacturing Operation Center, Samsung Electronics.

In the past, migration to the next larger wafer size traditionally began every 10 years after the last transition. For example, the industry began the transition to 300mm wafers in 2001, a decade after the initial 200mm manufacturing facilities (also known as "fabs") were introduced in 1991.

Keeping in line with the historical pace of growth, Intel, Samsung and TSMC agree that 2012 is an appropriate target to begin the 450mm transition. Given the complexity of integrating all of the components for a transition of this size, the companies recognize that consistent evaluation of the target timeline will be critical to ensure industry-wide readiness.

"Increasing cost due to the complexity of advanced technology is a concern for the future," said Mark Liu, TSMC's senior vice president of Advanced Technology Business. "Intel, Samsung, and TSMC believe the transition to 450mm wafers is a potential solution to maintain a reasonable cost structure for the industry."

The three companies will continue to work with International Sematech (ISMI), as it plays a critical role in coordinating industry efforts on 450mm wafer supply, standards setting and developing equipment test bed capabilities.

Source: Intel

Related stories:

IBM, Chartered, Infineon And Samsung Announce Process And Design Readiness For Silicon Circuits On 45nm Low-Power Techno
IBM, Chartered Semiconductor Manufacturing, Infineon Technologies, and Samsung Electronics Co., Ltd. today announced first silicon-functional circuits and the availability of design kits based on their collaboration for 45nm low-power process technology.
Copper Ridges Nearly Double X-ray Sensor Performance
A series of copper ridges nearly doubles the resolution of experimental X-ray sensors, enabling more precise identification of the X-ray “fingerprints” of different atoms, researchers at the National Institute of Standards and Technology (NIST) report. The sensors are expected to be powerful tools for astronomy, such as in determining the temperature and motion of matter in space, and for semiconductor materials analysis, helping to differentiate between nanoscale contaminant particles on silicon wafers.
AMD Opens New 300mm Fab 36 In Dresden, Germany
At a ceremony attended by top German government officials and leaders from across the semiconductor industry, AMD today announced the grand opening of its 300 millimeter Fab 36 in Dresden, Germany.
Devices Increase Potential For Flexible, Light-Weight Power
Scientists and engineers at the Air Force Research Laboratory's Materials and Manufacturing Directorate have made significant advancements in developing flexible, organic-based solar cells and photodetectors that can be used in a variety of Air Force systems.
A Simpler Design for X-Ray Detectors
A simplified design for ultra-sensitive X-ray detectors offering more precise materials analysis has been demonstrated at the National Institute of Standards and Technology (NIST). The advance is a step toward making such devices cheaper and easier to produce. Users may eventually include the semiconductor industry, which needs better X-ray detectors to identify and distinguish between nanoscale contaminant particles on silicon wafers.
Industry's first mass production of DRAM in 90nm technology
Samsung Electronics Co., Ltd., the world leader in advanced semiconductor memory technology, announced today the industry's first mass production of 90nanometer (nm) 512Mb DDR SDRAM on 300mm base wafers. Samsung pioneered nanometer level production technology in 2003 with production of 2Gb NAND flash memory in a 90nm process.


UMC's 90-nanometer Manufacturing Technology Sees Strong Acceptance from Industry Leaders
HSINCHU, Taiwan, May 24, 2004 -- UMC, a world leading semiconductor foundry, is driving the foundry industry's migration to 90nm technology, with some of the world's largest IC companies currently utilizing UMC for the fabrication of their most advanced 90nm chips. UMC first announced working 90nm customer silicon in March of 2003, and over the last year has been qualified for volume production by several major customers, including Xilinx, the world leader in programmable logic, and Texas Instruments, the largest supplier of silicon for wireless handsets. The speed of this ramp-to-volume production has surpassed the projections of most industry observers, and puts UMC clearly ahead of its competitors in the foundry industry. Products taking advantage of UMC's 90nm technology are being adopted for use in a wide range of electronic products due to the significant benefits that they offer in terms of performance, power consumption and cost.
Scientists demonstrate method for integrating nanowire devices directly onto silicon
Applied scientists at Harvard University in collaboration with researchers from the German universities of Jena, Gottingen, and Bremen, have developed a new technique for fabricating nanowire photonic and electronic integrated circuits that may one day be suitable for high-volume commercial production.

News discussion:

Technology news

[Home]   [Full version]